Abstract:

The project is focused on studying new physical states and processes, including integrated ones, in IV-VI and V-VI semiconductors, bismuth group semimetals, and some heterostructured oxide nanomaterials. The project is based on the introduction of the concept of taioring and integrating the processes and properties through interfaces with new functionalities properties characteristic of the above-mentioned semiconductors as topological insulators and oxide compounds with strong correlations and electronic ordering. The use of these interfaces exhibiting surface states and other specific properties of these materials is intended, on the one hand, for scaling the electronic structure and physical processes in line with relatively large-scale dimensional quantization and, on the other hand, for coupling the spin and charge processes, as well as different orderings, which lead to the improvement of performance and the generation of versatility.

The proposed approach is planned to be explored to reconfigure the electronic and thermoelectric transport, the photoelectric and optical processes in the infrared region, the spintronic and magnetoelectric processes, and some biophysical aspects. The technology platform for implementation of the proposed activities includes a number of methods for epitaxy of high-quality heterolayers (aerosol, hot-wall, and closed-volume MBE and MOCVD) providing control on a nanolevel and methods for preparing nanowires and nanoparticles. The previously adopted epitaxy methods and the ones that will be developed on the basis of the proposed concept and implemented in the laboratory will be used for qualitative accretion of the interfaces of materials with a significant mismatch of the crystal lattice parameters (from 2-3 to 8-10%) and thermal expansion coefficients by controlling the growth domains, rather than the elementary cells. Depending on the objective, the method with appropriate means provides either relaxation or generation of elastic stresses. In terms of the last-mentioned aspect, it is possible to reconfigure the functionalities through tensions leading to the induction or modification of topological states in IV-VI and V-VI semiconductors or a multiferroic state in oxides. This approach also solves the problem of integrating the functionality of different types of nanostructures, which will be developed and tested as elements of silicon-based microdevices with highly developed electronic signal processing.